Â鶹¹ÙÍø

N-channel rad hard power MOSFETs

High-performance N-channel rad hard power MOSFETs from 20 V to 650 V, qualified to DLA and ESA standards for space applications

anchor

Overview

Infineon offers a broad choice of N-channel rad hard MOSFETs in a range of hermetic packaging options screened to MIL-PRF-19500 and ESCC-5000, and available as QPLs. Select rad hard MOSFETs are also available as a bare die.

Key Features

  • Single-event effect (SEE) hardened
  • Low RDS(on)
  • Fast switching
  • Low total gate charge

Â鶹¹ÙÍø

About

Rad hard N-channel MOSFET applications

Infineon's rad hard N-channel MOSFETs are engineered for mission-critical space power applications with an operating life beyond 15 years such as:

  • Point-of-load (PoL) converters for FPGA, ASIC, and DSP core rails
  • Synchronous rectification
  • Active OR-ing circuits
  • Power distribution circuits
  • Load switching
  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management
DLA quality conformance testing of IR HiRel-branded rad hard FETs

HiRel products, unlike standard commercial ones, must undergo quality conformance testing at various levels to ensure product performance to specifications in the rugged conditions typical in space and defense applications.?

In the United States, the Defense Logistics Agency (DLA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on semiconductor devices and hybrid modules, namely MIL-PRF-19500/MIL-STD-750, MIL-PRF-38534/MIL-STD-883, and MIL-PRF-38535/MIL-STD-883.

MIL-PRF-19500/MIL-STD-750 are the controlling specifications for discrete semiconductors such as diodes and power MOSFETs. MIL-PRF-19500 directs discrete semiconductors to be manufactured to either JAN, JANTX, JANTXV, or JANS levels.

HiRel quality
ESA quality conformance testing of Infineon-branded rad hard FETs

HiRel products, unlike standard commercial products, must be submitted to various levels of quality conformance testing to ensure that the products are capable of performing to specifications in the often-harsh environments of military and space applications.?

In Europe, the European Space Agency (ESA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on discrete semiconductor components, hermetically sealed, and die, namely ESCC-5000.

Infineon HiRel hermetic products are available as (1) commercial hermetic, designated (P) with the same fit, form, and function as the flight parts and without radiation hardness or screening per Chart F3 in ESCC Generic Specification No. 5000, or (2) ESCC-5000 space-qualified for flight use. Such parts are denoted as (ES). Infineon-branded rad hard MOSFETs are also available as qualified bare die.

Radiation hardness assurance of Infineon rad hard MOSFETs

Infineon¡¯s rad hard MOSFETs are tested to verify their radiation hardness capability with an assurance program based on the requirements outlined in ESCC-5000, MIL-PRF-19500, and associated slash sheets. Our IR HiRel-branded products exceed the standard requirements with a sampling size up to two times greater than is required for every manufacturing lot. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. Radiation hardened by design techniques virtually eliminate the possibility of single-event gate rupture (SEGR) and single-event burnout (SEB) in the rad hard power MOSFETs. Robust performance is then verified through extensive SEE testing.

Superjunction technology

Infineon's rad hard PowerMOS FETs are based on the company¡¯s unique CoolMOS? superjunction technology. These ESA-qualified devices include the award-winning 650 V PowerMOS, which is the highest voltage QPL-qualified rad hard MOSFET on the market today.

The award-winning R9 superjunction technology platform in Infineon's IR HiRel-branded rad hard FETs offers notable size, weight, and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known gate drive setup. A simple drop-in to the same circuit designs yields immediate efficiency improvements. In systems such as high-throughput satellites, using R9-based rad hard MOSFETs can significantly reduce cost-per-bit ratio.

Rad hard N-channel MOSFET applications

Infineon's rad hard N-channel MOSFETs are engineered for mission-critical space power applications with an operating life beyond 15 years such as:

  • Point-of-load (PoL) converters for FPGA, ASIC, and DSP core rails
  • Synchronous rectification
  • Active OR-ing circuits
  • Power distribution circuits
  • Load switching
  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management

DLA quality conformance testing of IR HiRel-branded rad hard FETs

HiRel products, unlike standard commercial ones, must undergo quality conformance testing at various levels to ensure product performance to specifications in the rugged conditions typical in space and defense applications.?

In the United States, the Defense Logistics Agency (DLA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on semiconductor devices and hybrid modules, namely MIL-PRF-19500/MIL-STD-750, MIL-PRF-38534/MIL-STD-883, and MIL-PRF-38535/MIL-STD-883.

MIL-PRF-19500/MIL-STD-750 are the controlling specifications for discrete semiconductors such as diodes and power MOSFETs. MIL-PRF-19500 directs discrete semiconductors to be manufactured to either JAN, JANTX, JANTXV, or JANS levels.

HiRel quality

ESA quality conformance testing of Infineon-branded rad hard FETs

HiRel products, unlike standard commercial products, must be submitted to various levels of quality conformance testing to ensure that the products are capable of performing to specifications in the often-harsh environments of military and space applications.?

In Europe, the European Space Agency (ESA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on discrete semiconductor components, hermetically sealed, and die, namely ESCC-5000.

Infineon HiRel hermetic products are available as (1) commercial hermetic, designated (P) with the same fit, form, and function as the flight parts and without radiation hardness or screening per Chart F3 in ESCC Generic Specification No. 5000, or (2) ESCC-5000 space-qualified for flight use. Such parts are denoted as (ES). Infineon-branded rad hard MOSFETs are also available as qualified bare die.

Radiation hardness assurance of Infineon rad hard MOSFETs

Infineon¡¯s rad hard MOSFETs are tested to verify their radiation hardness capability with an assurance program based on the requirements outlined in ESCC-5000, MIL-PRF-19500, and associated slash sheets. Our IR HiRel-branded products exceed the standard requirements with a sampling size up to two times greater than is required for every manufacturing lot. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. Radiation hardened by design techniques virtually eliminate the possibility of single-event gate rupture (SEGR) and single-event burnout (SEB) in the rad hard power MOSFETs. Robust performance is then verified through extensive SEE testing.

Superjunction technology

Infineon's rad hard PowerMOS FETs are based on the company¡¯s unique CoolMOS? superjunction technology. These ESA-qualified devices include the award-winning 650 V PowerMOS, which is the highest voltage QPL-qualified rad hard MOSFET on the market today.

The award-winning R9 superjunction technology platform in Infineon's IR HiRel-branded rad hard FETs offers notable size, weight, and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known gate drive setup. A simple drop-in to the same circuit designs yields immediate efficiency improvements. In systems such as high-throughput satellites, using R9-based rad hard MOSFETs can significantly reduce cost-per-bit ratio.

Documents

Documents

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "none", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }