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The path to a more energy-efficient world is heavily reliant on the adoption of wide-bandgap (WBG) semiconductors. These innovative materials offer a multitude of benefits, including enhanced power efficiency, reduced size, lower weight, and decreased overall cost.

As a pioneer in the field of power semiconductors, Infineon boasts an impressive heritage spanning over two decades in Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Our profound system expertise, coupled with our in-house manufacturing capabilities, makes us an ideal partner for companies seeking to harness the potential of WBG power electronics.

Depending on application requirements, silicon carbide (CoolSiC?) and gallium nitride (CoolGaN?) have specific value propositions enabling highest levels of system performance. They leverage the full potential based on the power ratings and switching frequency required by the application.

The higher efficiency and durability of WBG semiconductors contribute to reduced energy consumption and lower greenhouse gas emissions. Additionally, the reduced need for cooling and smaller system sizes can lead to substantial cost savings in both manufacturing and operation. These environmental and economic benefits make WBG semiconductors attractive for sustainable technology development.

The robust nature of WBG materials leads to longer-lasting devices that are less prone to wear and degradation over time. This durability is essential in critical applications where reliability is paramount, such as in military and medical devices. The extended lifespan also contributes to lower maintenance costs and improved overall system reliability.

WBG devices can handle higher power densities, which allows for the creation of smaller and lighter electronic components. This is particularly beneficial in portable and space-constrained applications, such as aerospace and consumer electronics. High power density also means that more power can be delivered in a smaller package, enhancing the performance of power systems.

WBG materials have greater energy efficiency. They can operate at higher voltages, frequencies, and temperatures with less energy loss compared to silicon. This efficiency is particularly advantageous in power electronics, where reducing energy loss translates directly to cost savings and improved performance in applications such as power supplies, inverters, and motor drives.

WBG semiconductors can function at much higher temperatures than silicon. This is crucial in applications where high heat generation is unavoidable, such as in electric vehicles (EVs) and industrial machinery. The ability to operate at elevated temperatures reduces the need for complex cooling systems, thereby simplifying design and lowering costs.

These materials can switch on and off faster than silicon-based devices. This higher switching frequency enables more compact and lightweight designs for power converters and other electronic systems. It also improves the overall performance and reliability of these systems, making them more suitable for advanced technologies like 5G communications and high-frequency radar systems.

wide bandgap semiconductors Si SiC GaN
wide bandgap semiconductors Si SiC GaN
wide bandgap semiconductors Si SiC GaN

Wide-bandgap (WBG) semiconductor devices offer significant benefits across various applications. Infineon's portfolio addresses state-of-the-art electronics in consumer, industrial, and automotive applications.?As the leading supplier of power semiconductors, Infineon offers a comprehensive portfolio that includes Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN) technologies. This enables us to support customers in selecting the most suitable solution for their specific needs, facilitating the transition to WBG semiconductor devices while also ensuring continued support for traditional Si-based solutions where they remain the best choice.

Wide-Bandgap Semiconductor Âé¶¹¹ÙÍø

Wide-Bandgap Semiconductor Âé¶¹¹ÙÍø

  • Voltage classes from 400 V to 3.3 kV
  • MOSFETs, Schottky diodes, hybrid devices, intelligent power modules, automotive high-power modules, and more
  • Ultimate reliability and robustness in harsh environments
  • Best efficiency under multiple operating modes
  • World¡¯s most competitive 200 mm SiC power fab
  • Voltage classes from 40 V to 700 V
  • Transistors, integrated devices, bidirectional switches, modules, and more
  • Highest efficiency at the highest frequency enabling smallest system size
  • Industry-leading performance and supply
  • World¡¯s first 300 mm GaN fab
Infineon¡¯s comprehensive gate driver IC portfolio offers typical output current options ranging from 0.1 A up to 18 A. Our gate drivers integrate protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and overcurrent protection, making them well-suited for wide-bandgap power devices, including CoolGaN? and CoolSiC?.

Infineon is the smart choice when designing with GaN. Offering application and system expertise, the highest reliability, and a broad portfolio including matching gate driver ICs and controllers, Infineon is poised to guide the industry toward unparalleled success when it comes to designing with GaN.

Discover the power of CoolGaN? in action: Our video showcases its real-world benefits, from increased efficiency to reduced size and weight to lower overall system costs. Get the hard facts and see how GaN can transform your power

To lead the transformation towards sustainable energy generation and consumption, you know that silicon carbide technology is at the strategic core to address key market trends in this direction. To do so, here are five reasons why you should choose Infineon¡¯s SiC devices.

This video highlights the benefits of CoolSiC?, as seen through the eyes of our customers. Find out how our Silicon Carbide devices drive innovation in energy generation, storage, and consumption.

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