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Low-capacitance diodes for ESD protection

Faster: Low-capacitance diodes that maintain reliable ESD protection

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Overview

Low-capacitance ESD protection with optimized clamping performance while meeting signal integrity and linearity requirements for high speed and RF applications.

Key Features

  • Low cap - saves link budget
  • Low insertion loss for USB SS
  • Strong ESD clamping for latest SoCs
  • Smallest packages

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About

Low-capacitance ESD with strong protection performance

Advanced electronics rely increasingly on fine geometry ICs for their high-speed I/O, which poses ESD protection challenges. Faster I/O speeds require lower capacitance/ lower insertion loss protection devices to maintain signal integrity of the communication link. On the other hand, I/O connectors are inherently exposed to the external environment; the fine geometry ICs are increasingly sensitive to ESD events. Since ESD performance and low capacitance are in direct competition with one another in the design of ESD protection, high-speed I/O becomes especially hard to protect. Infineon's low-cap ESD protection devices help you achieve the right tradeoff for your design.

Wide selection of low-capacitance ESD devices

Infineon¡¯s wide portfolio of protection devices help you balance robust ESD protection and low capacitance for signal integrity. In addition, these devices ensure low capacitance values needed for high linearity so that harmonic generation on I/O lines near a strong RF emitter is reduced. In addition, the package options address board space limitations.

Supports USB 3, USB4, Thunderbolt, and HDMI

Infineon devices ensure optimal protection for different I/O, connectivity, and protection topologies, ranging from low-voltage, high-voltage, high-linearity, strong snapback, and no snapback.

Protecting antenna ports

Protecting antenna ports in RF systems has entered a new world of challenges. Traditional inductor shunt to ground solutions may no longer work for your system. Polymers while having virtually no parasitic capacitance fall well short of providing adequate protection for many newer systems. In such cases, a super-low capacitance silicon ESD with a special focus on high linearity become a welcome addition to your options for ESD protection. Even when not on an antenna port directly, ESD devices which are placed on a signal line near a high-power antenna can see the signal line act as an unintended receiving antenna which can activate a diode to generate unwanted harmonics which escape into your system. This is bad. Low-cap/high-linearity diodes are a valuable tool for addressing this issue with minimal cost and board space.

Low-capacitance ESD with strong protection performance

Advanced electronics rely increasingly on fine geometry ICs for their high-speed I/O, which poses ESD protection challenges. Faster I/O speeds require lower capacitance/ lower insertion loss protection devices to maintain signal integrity of the communication link. On the other hand, I/O connectors are inherently exposed to the external environment; the fine geometry ICs are increasingly sensitive to ESD events. Since ESD performance and low capacitance are in direct competition with one another in the design of ESD protection, high-speed I/O becomes especially hard to protect. Infineon's low-cap ESD protection devices help you achieve the right tradeoff for your design.

Wide selection of low-capacitance ESD devices

Infineon¡¯s wide portfolio of protection devices help you balance robust ESD protection and low capacitance for signal integrity. In addition, these devices ensure low capacitance values needed for high linearity so that harmonic generation on I/O lines near a strong RF emitter is reduced. In addition, the package options address board space limitations.

Supports USB 3, USB4, Thunderbolt, and HDMI

Infineon devices ensure optimal protection for different I/O, connectivity, and protection topologies, ranging from low-voltage, high-voltage, high-linearity, strong snapback, and no snapback.

Protecting antenna ports

Protecting antenna ports in RF systems has entered a new world of challenges. Traditional inductor shunt to ground solutions may no longer work for your system. Polymers while having virtually no parasitic capacitance fall well short of providing adequate protection for many newer systems. In such cases, a super-low capacitance silicon ESD with a special focus on high linearity become a welcome addition to your options for ESD protection. Even when not on an antenna port directly, ESD devices which are placed on a signal line near a high-power antenna can see the signal line act as an unintended receiving antenna which can activate a diode to generate unwanted harmonics which escape into your system. This is bad. Low-cap/high-linearity diodes are a valuable tool for addressing this issue with minimal cost and board space.

Documents

Documents

Design resources

Developer community

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