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Junction isolated (JI) gate driver ICs

JI level-shift high-voltage gate driver ICs for IGBTs and MOSFETs

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Overview

The p-n junction isolation (JI) technology is a mature, proven, industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable a rugged, monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance for specific motor control and switch mode power applications.

Key Features

  • Over current protection
  • Shutdown
  • Fault reporting
  • DESAT
  • Programmable deadtime
  • Shoot through protection
  • Separate sink and source outputs

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About

Pioneered by International Rectifier (IR) since 1989 with the introduction of the first monolithic product, the high-voltage integrated circuit (HVIC) technology uses patented and proprietary monolithic structures integrating bipolar, CMOS, and lateral DMOS devices with breakdown voltages above 700 V and 1400 V for operating offset voltages of 600 V and 1200 V.

Using this mixed-signal HVIC technology, both high-voltage level-shifting circuits and low-voltage analog and digital circuits can be implemented. With the ability to place high-voltage circuitry (in a 'well' formed by polysilicon rings) that can 'float' 600 V or 1200 V on the same silicon away from the rest of the low-voltage circuitry, high-side power MOSFETs, or IGBTs exist in many popular off-line circuit topologies such as buck, synchronous boost, half-bridge, full-bridge, and three-phase.

These HVIC gate drivers with floating switches are well-suited for topologies requiring high-side, half-bridge, and three-phase configurations.

Our junction isolated (JI) gate driver IC portfolio includes three-phase, half-bridge, and high-side gate driver ICs up to 4 A current and withstand voltages for each voltage class: <200 V, 600 V, 650 V, and 1200 V.? Our junction-isolated (JI) level-shift high-voltage gate driver ICs family provides advanced features such as overcurrent protection, shutdown, fault reporting, enable, independent op amp, desaturation protection, programmable deadtime, shoot-through protection, low UVLO (5 V), self-oscillating capability, and more. We offer industrial and automotive-qualified Junction isolated (JI) gate driver ICs.

Pioneered by International Rectifier (IR) since 1989 with the introduction of the first monolithic product, the high-voltage integrated circuit (HVIC) technology uses patented and proprietary monolithic structures integrating bipolar, CMOS, and lateral DMOS devices with breakdown voltages above 700 V and 1400 V for operating offset voltages of 600 V and 1200 V.

Using this mixed-signal HVIC technology, both high-voltage level-shifting circuits and low-voltage analog and digital circuits can be implemented. With the ability to place high-voltage circuitry (in a 'well' formed by polysilicon rings) that can 'float' 600 V or 1200 V on the same silicon away from the rest of the low-voltage circuitry, high-side power MOSFETs, or IGBTs exist in many popular off-line circuit topologies such as buck, synchronous boost, half-bridge, full-bridge, and three-phase.

These HVIC gate drivers with floating switches are well-suited for topologies requiring high-side, half-bridge, and three-phase configurations.

Our junction isolated (JI) gate driver IC portfolio includes three-phase, half-bridge, and high-side gate driver ICs up to 4 A current and withstand voltages for each voltage class: <200 V, 600 V, 650 V, and 1200 V.? Our junction-isolated (JI) level-shift high-voltage gate driver ICs family provides advanced features such as overcurrent protection, shutdown, fault reporting, enable, independent op amp, desaturation protection, programmable deadtime, shoot-through protection, low UVLO (5 V), self-oscillating capability, and more. We offer industrial and automotive-qualified Junction isolated (JI) gate driver ICs.

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