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RF front end components for telecommunications infrastructure

Highly reliable and compact RF components and RF modules for energy-efficient operation of massive MIMO 5G antenna systems in telecommunication infrastructure like cellular base stations

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Overview

Discover Infineon's RF front end components for massive MIMO antenna systems?in?telecom infrastructure?applications. Our portfolio of compact and efficient devices such as bias and control ICs and driver amplifiers ensure reliable signal transmission and reception with high quality and top-notch performance. Explore our comprehensive range of components and?take advantage of?the benefits they bring to?your?telecom infrastructure system.

Benefits

  • High performance and reliability
  • Wide operational bandwidth coverage
  • Compact and easy design-in devices
  • Optimized power & energy efficiency

About

Infineon's?RF front end components for?massive MIMO antenna systems

In 5G networks using massive MIMO antenna systems, the RF front end system is not only essential for transmitting and receiving wireless signals efficiently but also for handling an increased number of antennas, tightly synchronizing and coordinating them, all while maintaining high data rates and low latency. Optimal system performance and customer satisfaction depend on the quality of these components.

Leveraging industry expertise, Infineon provides state-of-the-art solutions designed to ensure reliable and efficient signal transmission and reception with minimized power consumption, all delivered in compact and lightweight designs.?

RF front end?driver amplifiers?for massive MIMO antenna systems

Infineon's wireless infrastructure driver amplifiers can be used as predrivers or drivers in RF applications, ranging from mMIMO 5G base stations to small cells and access points. Our tiny but mighty amplifiers are typically situated between the transceiver IC and power amplifier, but can also be used as power amplifiers themselves, in low power applications. These driver amplifiers boast high linearity and an excellent wide-band gain flatness for optimum linearization results in the driven power amplifier. Our driver amplifier technology also offers the best RF performance, with high power and high gain capability, reducing the required number of components, and making the base lighter and stations more efficient.

Explore our portfolio of driver amplifiers
Bias and control ICs for RF front end applications

Infineon's bias and control ICs are used to bias RF power amplifiers by generating accurate voltage with high-precision DACs. In addition, they support a multitude of functionalities to monitor the voltage, current, and temperature of a power amplifier, in order to keep the device in an ideal operating condition. To accomplish this, our bias and control ICs feature highly functional integration which ensures optimum operation of power-amplifier modules, allowing higher order modulation schemes and increased spectrum capacity.?

Explore our portfolio of bias and control ICs

Infineon's?RF front end components for?massive MIMO antenna systems

In 5G networks using massive MIMO antenna systems, the RF front end system is not only essential for transmitting and receiving wireless signals efficiently but also for handling an increased number of antennas, tightly synchronizing and coordinating them, all while maintaining high data rates and low latency. Optimal system performance and customer satisfaction depend on the quality of these components.

Leveraging industry expertise, Infineon provides state-of-the-art solutions designed to ensure reliable and efficient signal transmission and reception with minimized power consumption, all delivered in compact and lightweight designs.?

RF front end?driver amplifiers?for massive MIMO antenna systems

Infineon's wireless infrastructure driver amplifiers can be used as predrivers or drivers in RF applications, ranging from mMIMO 5G base stations to small cells and access points. Our tiny but mighty amplifiers are typically situated between the transceiver IC and power amplifier, but can also be used as power amplifiers themselves, in low power applications. These driver amplifiers boast high linearity and an excellent wide-band gain flatness for optimum linearization results in the driven power amplifier. Our driver amplifier technology also offers the best RF performance, with high power and high gain capability, reducing the required number of components, and making the base lighter and stations more efficient.

Explore our portfolio of driver amplifiers

Bias and control ICs for RF front end applications

Infineon's bias and control ICs are used to bias RF power amplifiers by generating accurate voltage with high-precision DACs. In addition, they support a multitude of functionalities to monitor the voltage, current, and temperature of a power amplifier, in order to keep the device in an ideal operating condition. To accomplish this, our bias and control ICs feature highly functional integration which ensures optimum operation of power-amplifier modules, allowing higher order modulation schemes and increased spectrum capacity.?

Explore our portfolio of bias and control ICs

Design resources

Documents

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