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CoolSiC? Schottky diodes 650 V G5

High efficiency and price performance

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Overview

Infineon's CoolSiC? Schottky Diodes 650 V deliver high price-performance ratio, leveraging advanced silicon carbide production facilities, a solid track record, utmost quality, and a very granular product portfolio. CoolSiC? Schottky diodes 650 V G5 comes with improved system efficiency complementing Infineon’s 600 V and 650 V CoolMOS? 7 superjunction MOSFET families.

Key Features

  • Lowest VF=1.25 V
  • Best-in-class (Qc x VF)
  • No reverse recovery charge
  • High dV and dt ruggedness

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About

High efficiency and price performance

With more compact designs and thin wafer technology, CoolSiC? Schottky diodes Generation 5 complement our 650 V CoolMOS? superjunction MOSFET families, satisfying application requirements of 650 V solutions. CoolSiC? Schottky diodes G5 convince with better efficiency compared to silicon diode alternatives.

CoolSiC? Schottky diodes 650 V G5 comes with improved system efficiency complementing Infineon’s 600 V and 650 V CoolMOS? 7 superjunction MOSFETs families.

Family of products with improved efficiency over all load conditions

The CoolSiC? Schottky diode 650 V G5 is the leading-edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon-proprietary innovative soldering process is combined with a more compact design, thin wafer technology, and a novel Schottky metal system.

The result is a family of products with improved efficiency over all load conditions, resulting from the best-in-class figure of merit (Qc x VF). CoolSiC? G5 diodes complement Infineon’s CoolMOS? 7 and CoolSiC? families, meeting the most stringent application requirements in the voltage range up to 650 V.

Improved system efficiency, system power density, and quiet switching

The lowest VF: 1.5 V leads to improved system efficiency over all load conditions for telecom and servers.

Best-in-class figure of merit (Qc x VF) permits increased system power density for solar.

No reverse recovery charge enables reduced cooling requirements and increased system reliability for PC power.

Temperature-independent switching behavior up to 175 degrees facilitates extremely fast switching for lighting, TV, and drives.

High efficiency and price performance

With more compact designs and thin wafer technology, CoolSiC? Schottky diodes Generation 5 complement our 650 V CoolMOS? superjunction MOSFET families, satisfying application requirements of 650 V solutions. CoolSiC? Schottky diodes G5 convince with better efficiency compared to silicon diode alternatives.

CoolSiC? Schottky diodes 650 V G5 comes with improved system efficiency complementing Infineon’s 600 V and 650 V CoolMOS? 7 superjunction MOSFETs families.

Family of products with improved efficiency over all load conditions

The CoolSiC? Schottky diode 650 V G5 is the leading-edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon-proprietary innovative soldering process is combined with a more compact design, thin wafer technology, and a novel Schottky metal system.

The result is a family of products with improved efficiency over all load conditions, resulting from the best-in-class figure of merit (Qc x VF). CoolSiC? G5 diodes complement Infineon’s CoolMOS? 7 and CoolSiC? families, meeting the most stringent application requirements in the voltage range up to 650 V.

Improved system efficiency, system power density, and quiet switching

The lowest VF: 1.5 V leads to improved system efficiency over all load conditions for telecom and servers.

Best-in-class figure of merit (Qc x VF) permits increased system power density for solar.

No reverse recovery charge enables reduced cooling requirements and increased system reliability for PC power.

Temperature-independent switching behavior up to 175 degrees facilitates extremely fast switching for lighting, TV, and drives.

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Design resources

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