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Silicon-on-insulator (SOI) gate driver ICs

SOI level-shift high-voltage gate driver ICs for IGBTs and MOSFETs

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Overview

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages, including an integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes.

Key Features

  • Integrated bootstrap-diode (BSD)
  • Industry best-in-class robustness
  • Isolated by buried silicon dioxide
  • High-voltage circuitry construction

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About

Introduction of the silicon-on-insulator (SOI) gate driver ICs

Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that cause latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation.

The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits including the 2ED218x - high current 650 V, 2.5 A, half-bridge SOI gate driver family, and 2ED210x - low current 650 V, 0.7 A, half-bridge SOI gate driver family. Both product families include two package options: DSO-8 and DSO-14.

Main benefits of Infineon SOI technology

The main benefits of our SOI technology are the best-in-class immunity to negative transient voltage that prevents erratic operation and latch-up while improving reliability.

The low ohmic integrated bootstrap diodes (BSD) have the lowest reverse recovery and forward losses resulting in increased efficiency, faster switching, lower temperature, and increased reliability.

Minimum level-shift losses improve driver efficiency and allow flexible housing designs, while integrated input filters enhance noise immunity and 200 V, 600 V, 650 V, and 1200 V withstand-voltages for each voltage design class providing operating margin.

Operation robustness of negative transient voltage at the VS pin (-VS)

Today's high-power switching inverters and drives carry a large load current. The voltage swing on the VS pin does not stop at the level of the negative DC bus. It swings below the level of the negative DC bus due to the parasitic inductances in the power circuit and from the die bonding to the PCB tracks. This undershoot voltage is called "negative transient voltage".

EiceDRIVER? high-voltage level-shift gate driver IC products using Infineon SOI technology have the best-in-the-industry operational robustness. Considering a safe operating line of an SOI gate driver (6ED2230S12T) at VBS = 15 V for pulse widths up to 1000 ns the products do not show unwanted functional anomalies or permanent damage to the IC.

Main benefit of Infineon SOI: Integrated, low-ohmic bootstrap diode

The bootstrap power supply is one of the most common techniques for supplying power to the high-side driver circuitry due to its simplicity and low cost.

The bootstrap power supply consists of a bootstrap diode and capacitor. The floating channel of level-shift gate drivers is typically designed for bootstrap operation. Infineon SOI drivers feature excellent integrated ultra-fast bootstrap diodes. The low diode resistance of RBS ¡Ü40 ¦¸ enables a wide operating range.

The Infineon SOI drivers with this feature can drive larger IGBTs without the risk of self-heating, minimize BOM count, and reduce system cost.

Main benefit of Infineon SOI: Low level-shift losses

Level-shift losses count as a significant part when the operating frequency increases. A level-shift circuit is used to transmit the switching information from the low side to the high side. The necessary charge of the transmission determines the level-shift losses.

EiceDRIVER? high-voltage level-shift gate driver IC products using the Infineon SOI technology require a very low charge to transmit the information. Minimizing level-shifting power consumption allows design flexibility of higher frequency operations, as well as a longer lifetime, improved system efficiency, and application reliability.

The thermal diagrams on the same PCB board (DC Bus voltage = 300 V; With CoolMOS? P7 in D-Pak; 300 kHz switching frequency) show a temperature difference of 55.6¡ãC lower in the power dissipation of the Infineon SOI-based products (2ED2106S06F).

Introduction of the silicon-on-insulator (SOI) gate driver ICs

Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that cause latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation.

The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits including the 2ED218x - high current 650 V, 2.5 A, half-bridge SOI gate driver family, and 2ED210x - low current 650 V, 0.7 A, half-bridge SOI gate driver family. Both product families include two package options: DSO-8 and DSO-14.

Main benefits of Infineon SOI technology

The main benefits of our SOI technology are the best-in-class immunity to negative transient voltage that prevents erratic operation and latch-up while improving reliability.

The low ohmic integrated bootstrap diodes (BSD) have the lowest reverse recovery and forward losses resulting in increased efficiency, faster switching, lower temperature, and increased reliability.

Minimum level-shift losses improve driver efficiency and allow flexible housing designs, while integrated input filters enhance noise immunity and 200 V, 600 V, 650 V, and 1200 V withstand-voltages for each voltage design class providing operating margin.

Operation robustness of negative transient voltage at the VS pin (-VS)

Today's high-power switching inverters and drives carry a large load current. The voltage swing on the VS pin does not stop at the level of the negative DC bus. It swings below the level of the negative DC bus due to the parasitic inductances in the power circuit and from the die bonding to the PCB tracks. This undershoot voltage is called "negative transient voltage".

EiceDRIVER? high-voltage level-shift gate driver IC products using Infineon SOI technology have the best-in-the-industry operational robustness. Considering a safe operating line of an SOI gate driver (6ED2230S12T) at VBS = 15 V for pulse widths up to 1000 ns the products do not show unwanted functional anomalies or permanent damage to the IC.

Main benefit of Infineon SOI: Integrated, low-ohmic bootstrap diode

The bootstrap power supply is one of the most common techniques for supplying power to the high-side driver circuitry due to its simplicity and low cost.

The bootstrap power supply consists of a bootstrap diode and capacitor. The floating channel of level-shift gate drivers is typically designed for bootstrap operation. Infineon SOI drivers feature excellent integrated ultra-fast bootstrap diodes. The low diode resistance of RBS ¡Ü40 ¦¸ enables a wide operating range.

The Infineon SOI drivers with this feature can drive larger IGBTs without the risk of self-heating, minimize BOM count, and reduce system cost.

Main benefit of Infineon SOI: Low level-shift losses

Level-shift losses count as a significant part when the operating frequency increases. A level-shift circuit is used to transmit the switching information from the low side to the high side. The necessary charge of the transmission determines the level-shift losses.

EiceDRIVER? high-voltage level-shift gate driver IC products using the Infineon SOI technology require a very low charge to transmit the information. Minimizing level-shifting power consumption allows design flexibility of higher frequency operations, as well as a longer lifetime, improved system efficiency, and application reliability.

The thermal diagrams on the same PCB board (DC Bus voltage = 300 V; With CoolMOS? P7 in D-Pak; 300 kHz switching frequency) show a temperature difference of 55.6¡ãC lower in the power dissipation of the Infineon SOI-based products (2ED2106S06F).

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "none", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }