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Flexibility, optimal electrical performance, and highest reliability. These are the keywords for a successful inverter layout. Our well-known 62 mm modules are the right choice for your design. We present our product family of half-bridges, choppers, common emitter, and single switches at 600 V/650 V/1200 V and 1700 V.

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About

62 mm power modules have a broad product spectrum; customers can choose from different voltage classes, power ratings, as well as different IGBT chip generations. The latest addition to the 1200 V 62 mm portfolio is the integration of CoolSiC? MOSFETs with RDS(on) ratings of 2, 3, and 6 m?. Designers benefit from the large 34 and 62 mm product portfolio offering high flexibility and reliability to the user. In addition, the portfolio supports in realizing modern inverter concepts for all kinds of applications efficiently.

Supporting faster development cycles, Infineon provides evaluation boards helping to make first module measurements. Our latest driver chips are used to be adopted for serial usage. Schematics, layout, and a part list are given in the evaluation board user guide.

The 62 mm modules incorporate important key features, e.g., a superior solution for frequency-controlled inverter drives, a UL/CSA certification with UL 1557 E83336, operating temperature up to 150 ¡ãC, an optimized switching characteristic, softness, and reduced switching losses. All existing packages with high current capability are RoHS compliant and also available with pre-applied thermal interface material.

62 mm IGBT7 modules are your best choice for a highly reliable and performant power module solution. This medium power module family is equipped with state-of-the-art TRENCHSTOP? IGBT7 chip technology. With its 800 A half-bridge configuration it offers the highest electrical performance within the package family and leading-edge power cycling capability. The high mechanical robustness of 62 mm modules is given by solid nickel-coated copper baseplate and screw main terminals. Main terminals placed in the middle of the housing are well fitting for parallel connection and 3-level configuration due to low inductive DC link connection.

All modules are available with our established pre-applied thermal interface material.

The 62 mm modules with IGBT7 incorporate important key features, e.g., a higher module performance and current rating. Pre-applied thermal interface material (TIM) for lowest thermal resistance, increased system lifetime, and simplified mounting are optional. UL/CSA certification with UL 1557 E83336, an operating temperature of up to 150¡ãC, 175¡ãC overload, and RoHS-compliant materials make these 62 mm modules the expert's choice.

CoolSiC? MOSFETs reduce the system complexity leading to lower system cost and size in mid- to high-power systems. Thanks to the outstanding material properties of SiC, solutions which have been possible in the low-voltage world (<600 V) are now feasible at higher voltages as well. The superior trench technology in combination with the thick gate oxide offers the highest reliability. In addition, the CoolSiC? body diode is long-term stable and does not drift.

CoolSiC? Trench MOSFET as the industrial benchmark technology opens and enlarges the 62 mm power module market by high volume applications where silicon IGBT technology reaches its limits.

The 62 mm modules with CoolSiC? MOSFETs incorporate important key features, e.g., they are high-speed switching modules with very low losses and the symmetrical module design for the same switching behavior by upper and lower switches, standard, proven fabrication technique, minimal cooling effort due to very low switching losses, high switching frequency for fewer magnetic components, smaller footprint and volume, the reduction of system-costs enabled by module concept, and the production at 62 mm high-volume line.

62 mm power modules have a broad product spectrum; customers can choose from different voltage classes, power ratings, as well as different IGBT chip generations. The latest addition to the 1200 V 62 mm portfolio is the integration of CoolSiC? MOSFETs with RDS(on) ratings of 2, 3, and 6 m?. Designers benefit from the large 34 and 62 mm product portfolio offering high flexibility and reliability to the user. In addition, the portfolio supports in realizing modern inverter concepts for all kinds of applications efficiently.

Supporting faster development cycles, Infineon provides evaluation boards helping to make first module measurements. Our latest driver chips are used to be adopted for serial usage. Schematics, layout, and a part list are given in the evaluation board user guide.

The 62 mm modules incorporate important key features, e.g., a superior solution for frequency-controlled inverter drives, a UL/CSA certification with UL 1557 E83336, operating temperature up to 150 ¡ãC, an optimized switching characteristic, softness, and reduced switching losses. All existing packages with high current capability are RoHS compliant and also available with pre-applied thermal interface material.

62 mm IGBT7 modules are your best choice for a highly reliable and performant power module solution. This medium power module family is equipped with state-of-the-art TRENCHSTOP? IGBT7 chip technology. With its 800 A half-bridge configuration it offers the highest electrical performance within the package family and leading-edge power cycling capability. The high mechanical robustness of 62 mm modules is given by solid nickel-coated copper baseplate and screw main terminals. Main terminals placed in the middle of the housing are well fitting for parallel connection and 3-level configuration due to low inductive DC link connection.

All modules are available with our established pre-applied thermal interface material.

The 62 mm modules with IGBT7 incorporate important key features, e.g., a higher module performance and current rating. Pre-applied thermal interface material (TIM) for lowest thermal resistance, increased system lifetime, and simplified mounting are optional. UL/CSA certification with UL 1557 E83336, an operating temperature of up to 150¡ãC, 175¡ãC overload, and RoHS-compliant materials make these 62 mm modules the expert's choice.

CoolSiC? MOSFETs reduce the system complexity leading to lower system cost and size in mid- to high-power systems. Thanks to the outstanding material properties of SiC, solutions which have been possible in the low-voltage world (<600 V) are now feasible at higher voltages as well. The superior trench technology in combination with the thick gate oxide offers the highest reliability. In addition, the CoolSiC? body diode is long-term stable and does not drift.

CoolSiC? Trench MOSFET as the industrial benchmark technology opens and enlarges the 62 mm power module market by high volume applications where silicon IGBT technology reaches its limits.

The 62 mm modules with CoolSiC? MOSFETs incorporate important key features, e.g., they are high-speed switching modules with very low losses and the symmetrical module design for the same switching behavior by upper and lower switches, standard, proven fabrication technique, minimal cooling effort due to very low switching losses, high switching frequency for fewer magnetic components, smaller footprint and volume, the reduction of system-costs enabled by module concept, and the production at 62 mm high-volume line.

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