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600 V CoolMOS? 8

The high voltage super-junction MOSFET family combining the best out of the 600 V CoolMOS? 7 families

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Overview

Infineon's newest CoolMOS? 8 at 600 V is leading the way in high voltage super-junction MOSFET technology worldwide, setting the standard for both technology and price performance on a global scale.The series is equipped with an integrated fast body diode, making it suitable for a wide range of applications. It is enhancing Infineon¡¯s WBG offering and the successor of the 600 V CoolMOS? 7 MOSFET family including P7, S7, CFD7, C7, G7 and PFD7.

Key Features

  • World class RDS(on)*A
  • Integrated fast body diode
  • Excellent commutation ruggedness
  • Advanced interconnect technology
  • Gradual portfolio from 7 m?

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About

600 V CoolMOS? 8 the high-voltage superjunction MOSFET family

The 600 V CoolMOS? 8 is Infineon¡¯s latest high-voltage superjunction (SJ) MOSFET technology. It comes with an integrated fast body diode targeting a broad variety of applications. They range from lower power SMPS up to the highest power levels, such as server, telecom, solid state circuit breakers, solid state relays, and EV charging stations.

Improvement over existing 600 V CoolMOS? 7 series products

CoolMOS? 8 comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 15% over CFD7, reverse recovery charge (Qrr) of down to 10% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

CoolMOS? 8 also features Top Side Cooling Packages.

Discover High Voltage MOSFET Top Side Cooling Pack
Application usage

CoolMOS? 8 devices offer highest efficiency and best-in-class (BiC) reliability in soft switching topologies such as LLC and ZVS phase-shift full-bridge. Furthermore, it offers an outstanding level of performance in PFC, TTF, and other hard-switching topologies.

In addition, CoolMOS? 8 enables higher power density thanks to its optimized RDS(on) which allows us to bring our BiC product down to a single digit of 7 m¦¸ and enables cost attractive Si-based solutions, complementing our wide band gap (WBG) offerings.

Discover wide band gap (WBG) offerings

600 V CoolMOS? 8 the high-voltage superjunction MOSFET family

The 600 V CoolMOS? 8 is Infineon¡¯s latest high-voltage superjunction (SJ) MOSFET technology. It comes with an integrated fast body diode targeting a broad variety of applications. They range from lower power SMPS up to the highest power levels, such as server, telecom, solid state circuit breakers, solid state relays, and EV charging stations.

Improvement over existing 600 V CoolMOS? 7 series products

CoolMOS? 8 comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 15% over CFD7, reverse recovery charge (Qrr) of down to 10% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

CoolMOS? 8 also features Top Side Cooling Packages.

Discover High Voltage MOSFET Top Side Cooling Pack

Application usage

CoolMOS? 8 devices offer highest efficiency and best-in-class (BiC) reliability in soft switching topologies such as LLC and ZVS phase-shift full-bridge. Furthermore, it offers an outstanding level of performance in PFC, TTF, and other hard-switching topologies.

In addition, CoolMOS? 8 enables higher power density thanks to its optimized RDS(on) which allows us to bring our BiC product down to a single digit of 7 m¦¸ and enables cost attractive Si-based solutions, complementing our wide band gap (WBG) offerings.

Discover wide band gap (WBG) offerings

Documents

Documents

Design resources

Developer community

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