Â鶹¹ÙÍø

SuperSO8 DSC ¨C PQFN 5x6 with dual-side cooling

OptiMOS? power MOSFETs in SuperSO8 DSC package in 40 V - 150 V range with dual-side cooling (DSC) for enhanced thermal performance

anchor

Overview

OptiMOS? 6 power MOSFETs with 40 V range and OptiMOS? 5 power MOSFETs in 40 V - 150 V range in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with an industry-standard footprint.

Key Features

  • High-performance silicon technology
  • Low topside RthJC(0.72 K/W)
  • Package rated to TJmax=175?C
  • Industry-standard footprint
  • Compatible with PQFN 5x6

Â鶹¹ÙÍø

About

Achieve greater heat dissipation and performance with SuperSO8 DSC

When using bottom-side cooling solutions (e.g., SuperSO8, PQFN 5x6), most of the heat generated by the MOSFETs is transferred to the PCB, which increases the PCB temperature due to its poor thermal resistance. Dual-side cooling solutions add another thermal path (bottom through PCB + top through exposed clip and heatsink) to dissipate the heat generated in the MOSFET die.

About 30 percent of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. This enables improved reliability of the PCB as it runs cooler at the same power dissipation, or to achieve higher power density by handling more power by the MOSFET.

Increased power density

With the increase in power density requirements in AC-DC and DC-DC converters, the role of packaging is changing from the passive pure silicon die envelope used mainly for protection of the silicon die, to a more active role offering actual benefits for new products. In fact, power density can be increased in two ways: the first option is using new silicon technology that provides a lower?RDS(on) per area and better figures-of-merit (FOMs), thereby decreasing power losses. The other option is to improve the potential for extracting the heat generated by the losses from the device itself. In this case, the packaging technology plays a crucial role.?

The SuperSO8 DSC family of MOSFETs offers both: the new silicon technology and improved thermal performance.

OptiMOS??power MOSFETs in 40 V - 150 V range

The SuperSO8 DSC package provides lower conduction and switching losses resulting in:

  • Higher system efficiency
  • Superior power handling capability
  • Higher power density designs
  • Improved reliability
  • Longer lifetime

The package is a drop-in replacement for SuperSO8 and PQFN 5x6 products, making it an easy to design-in solution with no PCB layout change required.

Achieve greater heat dissipation and performance with SuperSO8 DSC

When using bottom-side cooling solutions (e.g., SuperSO8, PQFN 5x6), most of the heat generated by the MOSFETs is transferred to the PCB, which increases the PCB temperature due to its poor thermal resistance. Dual-side cooling solutions add another thermal path (bottom through PCB + top through exposed clip and heatsink) to dissipate the heat generated in the MOSFET die.

About 30 percent of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. This enables improved reliability of the PCB as it runs cooler at the same power dissipation, or to achieve higher power density by handling more power by the MOSFET.

Increased power density

With the increase in power density requirements in AC-DC and DC-DC converters, the role of packaging is changing from the passive pure silicon die envelope used mainly for protection of the silicon die, to a more active role offering actual benefits for new products. In fact, power density can be increased in two ways: the first option is using new silicon technology that provides a lower?RDS(on) per area and better figures-of-merit (FOMs), thereby decreasing power losses. The other option is to improve the potential for extracting the heat generated by the losses from the device itself. In this case, the packaging technology plays a crucial role.?

The SuperSO8 DSC family of MOSFETs offers both: the new silicon technology and improved thermal performance.

OptiMOS??power MOSFETs in 40 V - 150 V range

The SuperSO8 DSC package provides lower conduction and switching losses resulting in:

  • Higher system efficiency
  • Superior power handling capability
  • Higher power density designs
  • Improved reliability
  • Longer lifetime

The package is a drop-in replacement for SuperSO8 and PQFN 5x6 products, making it an easy to design-in solution with no PCB layout change required.

Documents

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "none", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }