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High-performance duals

Optimized for high efficiency and high current capability

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Overview

Infineon's family of high-performance duals includes the OptiMOS? power block MOSFETs and the OptiMOS? half-bridge MOSFETs. OptiMOS? power block devices integrate a low-side and a high-side MOSFET in a synchronous buck converter configuration with a source-down connection of the low-side MOSFET for improved thermals, simplified layout, and reduced EMI.

Key Features

  • Very low RDS(on)
  • Small PQFN 5x6 package outline
  • Source-down low-side MOSFET
  • Optimized PCB thermal cooling
  • Internally connected MOSFETs
  • Low package inductance
  • High-side Kelvin connection
  • Compact and simple DC-DC layout
  • Available in asymmetric half-bridge

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About

Benefits of high-performance dual MOSFETs

Benefits of choosing Infineon¡¯s high-performance dual MOSFETs include:

  • Compact and simplified layout for DC-DC converter applications
  • Optimized layout with lowest loop inductance
  • Best thermal performance resulting in high-efficiency performance
Dual MOSFETs in power block

The asymmetric half-bridge MOSFET solution handles 50 A in a 30 mm? footprint

OptiMOS? 5 power block is a leadless SMD 5.0x6.0 mm? small-outline package, integrating a low-side and a high-side MOSFET targeting synchronous rectification buck converter applications.

By replacing two separate discrete packages, such as SO8 or SuperSO8, with the space-saving MOSFET package, OptiMOS? 5 power block 5x6 allows you to shrink your designs by at least 50%. Standardizing power packages benefits customers, as the number of different package outlines available on the marketplace is minimized.

Benchmark efficiency and high current handling

The MOSFET half-bridge family features Infineon¡¯s proven OptiMOS? 5 technology, which offers low on-state resistance (RDS(on)) and figure of merits (Qg, Qgd). The source-down connection of the low-side MOSFET results in a large PGND pad which significantly improves the thermal junction to the board, simplifying the layout and reducing the EMI. This solution allows you to optimize your designs by increasing the switching frequency and power density as well as reducing the overall BOM costs.

Benefits of high-performance dual MOSFETs

Benefits of choosing Infineon¡¯s high-performance dual MOSFETs include:

  • Compact and simplified layout for DC-DC converter applications
  • Optimized layout with lowest loop inductance
  • Best thermal performance resulting in high-efficiency performance

Dual MOSFETs in power block

The asymmetric half-bridge MOSFET solution handles 50 A in a 30 mm? footprint

OptiMOS? 5 power block is a leadless SMD 5.0x6.0 mm? small-outline package, integrating a low-side and a high-side MOSFET targeting synchronous rectification buck converter applications.

By replacing two separate discrete packages, such as SO8 or SuperSO8, with the space-saving MOSFET package, OptiMOS? 5 power block 5x6 allows you to shrink your designs by at least 50%. Standardizing power packages benefits customers, as the number of different package outlines available on the marketplace is minimized.

Benchmark efficiency and high current handling

The MOSFET half-bridge family features Infineon¡¯s proven OptiMOS? 5 technology, which offers low on-state resistance (RDS(on)) and figure of merits (Qg, Qgd). The source-down connection of the low-side MOSFET results in a large PGND pad which significantly improves the thermal junction to the board, simplifying the layout and reducing the EMI. This solution allows you to optimize your designs by increasing the switching frequency and power density as well as reducing the overall BOM costs.

Documents

Documents

Design resources

Developer community

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