750 V Silicon Carbide MOSFETs
750 V CoolSiC? MOSFETs Automotive and Industrial grades with on-resistance ratings from 7 m? up to 140 m?
Infineon 750 V CoolSiC? Silicon Carbide MOSFET discretes offers best in class robustness to parasitic turn-on and mature gate oxide technology, enables exceptional perfomance in hard-switching topologies like Totem Pole, ANPC, Vienna Rectifier and FCC .
Moreover the substantial reduction in Output Capacitance (Coss) in G2 enable to operate at higher switching frequency in soft switching topologies, such as Cycloconverter, CLLC, DAB and LLC.
It is perfectly tailored for applications with stringent requierments in terms of reliabilitys, power density and efficien such as On-board charger, DC-DC converter, DC-AC converter, as well as AI Servers, Solar inverter and EV charging. where Q-DPAK enable to leverage the intrinsic fast switching speed of SiC, while guarantees power dissipation capability of approximately 20 W.
Details 750 V CoolSiC? automotive MOSFET
The Tiny Power Box, a joint project including Infineon and Silicon Austria Labs features a compact single phase 7 kW Onboard Charger using full Infineon CoolSiC solutions.
CoolSiC? MOSFET 750 V
- Highly robust 750 V technology, 100% avalanche tested
- Best-in-class RDS(on) x Qfr
- Excellent RDS(on) x Qoss and RDS(on) x QG
- Unique combination of low Crss/Ciss and high VGS(th)
- Infineon proprietary die attach technology
- Driver source pin available
Q-DPAK Top side cooling package
Top-side cooling (TSC) devices are surface-mounted power devices that are soldered onto a printed circuit board (PCB). The heat generated by the semiconductor die is extracted through the top of the package to an attached coldplate.
TSC power packages are a solution to improve thermal and electrical performance. These packages also help increase power density and reduce manufacturing effort.
Key features
- Through-hole and SMD packages
- Integrated Kelvin source
- Beyond AEC Q101 qualification for Automotive grade devices; JEDEC qualification for Industrial grade devices
- high portfolio granularity RDS(on) 8 m? to 140 m? and packages
Watch this on-demand webinar to learn how GaN and the new CoolSiC MOSFET 750 V G2 enable more compact, efficient, and reliable xEV power conversion systems, minimizing components and thermal management.
This video highlights the benefits of CoolSiC?, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.
This video provides valuable insights into the advantages of WBG (SiC & GaN) technology and its potential impact on the future of renewable energy, especially solar and energy storage systems.
CoolSiC? MOSFET Webinars
This training will introduce you to the gate oxide reliability of CoolSiC? MOSFETs and how Infineon's design enables the effective screening of defects by opting for a trench MOSFET.
Additionally, you will understand how this decision has allowed Infineon to achieve high reliability that surpasses that of mature silicon technology without negatively impacting key performance parameters.?
The switching performance in particular is influenced by the chip's inherent properties, the device's operating conditions and the external circuitry. Optimizing operating conditions and circuitry can significantly improve the device performance in an application.
Circuit designers benefit from SPICE compact models that they can use in computer simulation to understand, troubleshoot and optimize the static and dynamic device behavior of applications through virtual prototyping.
This training explains the characteristics and use cases of simulation models offered by Infineon for CoolSiC? MOSFETs, what to use them for and how to use them effectively.
This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC? MOSFET Microlearnings
Discover the benefits and challenges associated with connecting SiC power MOSFETs in parallel
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC? MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC? will help to design the next generation of servo drives.
Driving a CoolSiC? MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
- Distinguish the features and benefits of Infineon’s CoolSiC? solutions in target applications and identify Infineon’s fully scalable CoolSiC? portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in AC-DC applications!
Click here to find out more.
The next generation of automotive applications presents several challenges for on-board charger design configurations. To meet all the while keeping costs in mind, Infineon offers a combination of technologies, such as silicon and silicon carbide MOSFETs, in multiple packaging solutions to enhance topology innovation.
